2002. 12. 5 1/3 semiconductor technical data ktc812t revision no : 1 for muting and switching application. features high emitter-base voltage : v ebo =25v(min.) high reverse h fe : reverse h fe =150(typ.) (v ce =-2v, i c =-4ma) low on resistance : r on =1 (typ.), (i b =5ma) maximum rating (ta=25 ) dim millimeters a b d e ts6 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k 0.60 l 0.55 a f g g d k k b e c l h j j i 2 3 5 16 4 + _ + _ + _ + _ + _ 1. q emitter 2. q base 3. q collector 4. q emitter 5. q base 6. q collector 1 1 2 2 2 1 electrical characteristics (ta=25 ) note : h fe classification b: 350 1200 characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 25 v collector current i c 300 ma base current i b 60 ma collector power dissipation p c * 0.9 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =25v, i c =0 - - 0.1 a dc current gain h fe v ce =2v, i c =4ma 350 - 1200 collector-emitter saturation voltage v ce(sat) i c =30ma, i b =3ma - 0.042 0.3 v base-emitter voltage v be v ce =2v, i c =4ma - 0.61 - v transition frequency f t v ce =6v, i c =4ma - 30 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 4.8 7 pf switching time turn-on time t on 1k ? 3k ? 4k ? 50? 10v cc v =12v bb v =-3v 1 s 2% output duty cycle input < = - 160 - ns storage time t stg - 500 - fall time t f - 130 - h rank fe type name marking lot no. m 123 654 * package mounted on a ceramic board (600 0.8 ) 1 q1 q2 23 65 4 equivalent circuit (top view) epitaxial planar npn transistor
2002. 12. 5 2/3 ktc812t revision no : 1 collector current i (ma) 0 c 0 base-emitter voltage v (v) be be c i - v collector current i (ma) 0 c 0 collector-emitter voltage v (v) ce ce c i - v (q , q common) 10 transtion frequency f (mhz) 5 t 500 -3 -1 -0.3 -0.1 emitter current i (ma) e f - i collector current i (ma) dc current gain h 0.3 1 3 10 c 50 fe h - i collector-emitter voltage v (v) collector current i (ma) 0 0 c ce i - v (reverse region) cce 1 collector-emitter saturation collector current i (ma) 0.1 0.3 1 3 c ce(sat) 10 500 v - i 246810 10 20 30 40 50 common emitter ta=25 c i =20 a b 160 140 120 100 80 60 40 0 -2 -4 -6 -8 -10 -2 -4 -6 -8 -10 common emitter ta=25 c 50 40 30 20 i =10 a 0 b fe c 30 100 100 300 500 1k 3k 5k common emitter ta=100 c v =6v ce v =2v ce ta=25 c ta=-25 c ce(sat) c voltage v (mv) 10 30 100 300 3 5 30 50 100 300 common emitter i /i =10 c b 0.4 0.8 1.2 1.6 100 200 300 common emitter v =2v ce t a=100 c ta=25 c ta=-25 c te -10 -30 -100 30 50 100 300 common emitter v =6v ta=25 c ce 12
2002. 12. 5 3/3 ktc812t revision no : 1 collector-emitter on resistance on 0.3 0.3 0.1 0.03 0.01 base current i (ma) b r - i c - v cb collector-base voltage v (v) 0.3 0.5 1 3 ob 1 collector output capacitance 10 ob cb c (pf) 510 30 3 5 30 f=1mhz i =0 ta=25 c e on b r ( ? ) 1310 0.5 1 3 5 10 30 50 100 1k ? 10k ? i b c collector power dissipation p (w) ambient temperature ta ( c) 0 0 pc - ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 mounted on a ceramic board (600mm ` 0.8mm) 2
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